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基于QD-SOA-XGM的全光逻辑或非门研究
引用本文:王玉倩,王海龙,孔雪纯,杨帅,龚谦. 基于QD-SOA-XGM的全光逻辑或非门研究[J]. 通信技术, 2020, 0(1): 9-14
作者姓名:王玉倩  王海龙  孔雪纯  杨帅  龚谦
作者单位:山东省激光偏光与信息技术重点实验室曲阜师范大学物理系;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室
基金项目:国家自然科学基金(No.61674096);山东省自然科学基金(No.ZR2014FM011)~~
摘    要:为了改善基于交叉增益调制效应的量子点半导体光放大器全光逻辑或非门的性能,研究了QD-SOA-XGM全光逻辑门的码型效应特性,用两个连“1”脉冲和单个“1”脉冲的峰值功率来衡量,即P30/P20。研究结果表明:第一级输入电流越小,逻辑或非门的性能越好,而第二级输入电流对或非门性能影响很小;在一定范围内,输入连续光功率越大、有源区长度越长、有源区宽度越宽、最大模式增益越大、损耗系数越小,或非门输出效果越好。

关 键 词:级联量子点半导体光放大器  交叉增益调制  全光逻辑或非门  码型效应

All-Optical Logic NOR Gate based on QD-SOA-XGM
WANG Yu-qian,WANG Hai-long,KONG Xue-chun,YANG Shuai,GONG Qian. All-Optical Logic NOR Gate based on QD-SOA-XGM[J]. Communications Technology, 2020, 0(1): 9-14
Authors:WANG Yu-qian  WANG Hai-long  KONG Xue-chun  YANG Shuai  GONG Qian
Affiliation:(Shandong Provincial Key Laboratory of Polarization and Information Technology,Department of Physics,Qufu Normal University,Qufu Shandong 273165,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)
Abstract:In order to improve properties of all-optical logic NOR gates of quantum dot semiconductor optical amplifiers based on cross-gain modulation effects,the characteristics of QD-SOA-XGM all-optical logic gates are explored.It is measured by the peak power of two consecutive 1 pulses and a single 1 pulse,namely P30/P20.The research results indicate that the smaller the first stage input current,the better the performance of the logic NOR gate,while the second stage input current has little effect on the performance of the NOR gate;Within a certain range,the larger the input continuous optical power,the longer the active area length,the wider the active area width,the larger the maximum mode gain,the smaller the loss coefficient,and the better the NOR output effect.
Keywords:cascaded quantum dot semiconductor optical amplifier  cross gain modulation  all-optical logic NOR gate  pattern effect*
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