溅射法制备钇掺杂铟锌氧薄膜和器件特性研究王丹丹,王卿璞*,王汉斌,张锡健,武丽伟,李福杰,袁帅中国,济南,山东大学物理学院

室温下，采用射频磁控溅射法分别在钠钙玻璃和P型硅衬底上制备了不同厚度的钇掺杂铟锌氧薄膜。研究了薄膜的结构形貌和光学特性。以P型硅为栅极制备了底栅结构的YIZO薄膜晶体管，并研究了器件的输出和转移特性。研究发现，室温下制备的所有Y掺杂IZO薄膜均为非晶结构，YIZO薄膜晶体管均为n沟道耗尽型器件。有源层厚度为20nm的器件的开关电流比超过105，亚阈值摆幅为2.20 V/decade，阈值电压为-1.0V, 饱和迁移率为0.57 cm2/ V·s。

Characteristics of sputtered Y-doped IZO thin films and devices

Yttrium-doped IZO (YIZO) thin films with different thickness have been prepared on soda-lime glass (SLG) and P-Si substrates by radio frequency magnetron sputtering at room temperature. Structural morphology and optical properties of the films have been investigated. YIZO thin film transistors (TFTs) with the bottom-gate-structure are fabricated on P-Si substrates. The output and transfer characteristics of YIZO-TFT have been studied. It has been found that all YIZO thin films prepared at room temperature are amorphous, and the YIZO TFTs exhibit n-channel depletion mode. YIZO-TFT with active layer thickness of 20 nm shows an on/off ratio over 10⁵, a sub-threshold swing of 2.20 V/decade at a low operating voltage of -1.0 V, and saturation mobility values over 0.57 cm²/(V· s).