CMP碱性抛光液中的各组成成分对抛光速率影响程度的量化研究

本文结合神经网络和人工蜂群算法提出了CMP铜抛光速率预测模型，根据该模型，采用敏感性分析方法定量研究了碱性铜抛光液中的各成分（螯合剂、氧化剂、磨料和活性剂）及其交互作用对抛光速率的影响。结果表明：螯合剂、氧化剂、磨料和活性剂对抛光速率的相对影响系数分别为0.78、0.53、0.29、0.19；当抛光液中螯合剂和氧化剂含量的比例在2-7之间时，其交互作用对速率的影响最大，其敏感性系数在5-9之间；当磨料和氧化剂含量的比例>=5时，其交互作用对速率的影响比较大，其敏感性系数在2.5-6之间；活性剂和氧化剂的交互作用对抛光速率的影响不大，其敏感性系数小于3。因此，通过对神经网络和人工蜂群算法的改进，提出的CMP铜抛光速率预测模型可量化分析铜CMP抛光液的性能。

A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate

The influence of the components of an alkali polishing slurry and the mutual influences on the Cu polishing rate were investigated by a CMP polishing rate prediction model established with a modified artificial neural network based on the artificial bee colony algorithm. The quantitative method of sensitivity analysis was employed to fulfill the purpose of quantizing the influence on the polishing rate. The result of the analysis indicates that under certain CMP conditions, the Cu polishing rate was controlled by the silica abrasives, the FA/O chelating agent, the surfactant and the oxidant agent in the polishing slurry. Such factors showed the different sensitivity coefficients with 0.78, 0.53, 0.29 and 0.19 respectively on all the sample points. The mutual influence between the FA/O chelating agent and the oxidant agent on the polishing rate seemed obviously strongest when the proportion of them was 2 to 7, with the global sensitivity coefficients between 5 to 9; the mutual influence of silica abrasives and oxidant on the polishing rate was greater as the proportion of the above additives was beyond 5, with the global sensitivity coefficients between 2.5 and 6; the mutual influence of the surfactant and oxidant on the polishing rate was not obvious, with global sensitivity coefficients less than 3. Thus, it provides a kind of effective method for quantitating the influence with the components of the CMP alkali slurry on the polishing rate.