| 高K栅介质/金属栅极金属氧化物半导体晶体管平带电压roll-off现象物理起源研究 |
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| 引用本文： | 韩锴,王晓磊,王文武.高K栅介质/金属栅极金属氧化物半导体晶体管平带电压roll-off现象物理起源研究[J].半导体学报,2015,36(9):094006-4. |
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| 作者姓名： | 韩锴 王晓磊 王文武 |
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| 基金项目： | 国家自然基金，潍坊学院博士基金 |
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| 摘 要： | 本文从能带平衡的角度来研究带有高K栅介质/金属栅极的金属氧化物半导体晶体管平带电压roll-off现象，认为随着高K介质与Si衬底之间中间层厚度的减小，高K介质与Si之间直接的电子交换会从无到有，越来越强，而这可能是roll-off现象的起源之一。此外给出了在不同条件下基于此模型得到的理论模拟结果。
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| 关 键 词： | high-k dielectric band alignment VFB roll off |
| 收稿时间： | 5/8/2015 12:00:00 AM |
Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure |
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| Han Kai,Wang Xiaolei and Wang Wenwu.Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure[J].Chinese Journal of Semiconductors,2015,36(9):094006-4. |
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| Authors: | Han Kai Wang Xiaolei and Wang Wenwu |
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| Affiliation: | 1. Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | The physical origin of the flatband voltage (VFB) roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions. |
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| Keywords: | high-k dielectric band alignment VFB roll off |
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