A 5.8 GHz Low Noise Amplifier for Wireless LAN Applications in Silicon Bipolar Technology |
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Authors: | Gerd Schuppener Mehran Mokhtari Boris Kerzar |
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Affiliation: | (1) Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Sweden |
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Abstract: | A monolithic integrated low-noise amplifier for operation in the 5.8-GHzband is described. Two different versions have been implemented where the biasing wasadapted to allow operation over a different range of supply voltage. At 5-V, theamplifiers gain is about 17-dB, with a noise figure of 4.2-dB and 1-dB compressionpoint at –15-dBm input power. The circuits have been designed utilizing a0.6-micron silicon bipolar production technology, featuring npn transistors with and of about20-GHz. |
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Keywords: | low noise amplifier wireless LAN silicon bipolar |
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