| InGaAs/GaAs/AlGaAs应变量子阱激光器 |
| |
| 引用本文： | 徐遵图,徐俊英,杨国文,张敬明,陈昌华,陈良惠,沈光地. InGaAs/GaAs/AlGaAs应变量子阱激光器[J]. 中国激光, 1999, 26(5): 390-394 |
| |
| 作者姓名： | 徐遵图 徐俊英 杨国文 张敬明 陈昌华 陈良惠 沈光地 |
| |
| 作者单位： | 中国科学院半导体研究所国家光电子器件工程研究中心，北京工业大学光电子技术实验室 |
| |
| 摘 要： | 优化设计了既能实现较小垂直方向远场发散角，又能降低腔面光功率密度的ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变层量子阱激光器，并计算了该结构激光器实现基横模工作的脊形波导结构参数。利用分子束外延生长了ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器材料并研制出基横模输出功率大于１４０ｍＷ，激射波长为９８０ｎｍ的脊形波导应变量子阱激光器，其微分量子效率为０．８Ｗ／Ａ，垂直和平行结平面方向远场发散角分别为２８°和６．８°
|
| 关 键 词： | 高质量光束，高功率，基横模，分子束外延 |
| 收稿时间： | 1997-11-11 |
InGaAs/AlGaAs Strained Layer Quantum Well Lasers |
| |
| Xu Zuntu , Xu Junying Yang Guowen Zhang Jingming Chen changhua Chen Lianghui Shen Guangdi Institute of Semiconductor,Chinese Academy of Sciences and National Engineering Research Center for Optoelectronics Device. InGaAs/AlGaAs Strained Layer Quantum Well Lasers[J]. Chinese Journal of Lasers, 1999, 26(5): 390-394 |
| |
| Authors: | Xu Zuntu Xu Junying Yang Guowen Zhang Jingming Chen changhua Chen Lianghui Shen Guangdi Institute of Semiconductor Chinese Academy of Sciences National Engineering Research Center for Optoelectronics Device |
| |
| Affiliation: | Xu Zuntu 1,2 Xu Junying 1 Yang Guowen 1 Zhang Jingming 1 Chen changhua 1 Chen Lianghui 1 Shen Guangdi 2 1Institute of Semiconductor,Chinese Academy of Sciences and National Engineering Research Center for Optoelectronics Device |
| |
| Abstract: | InGaAs/GaAs/AlGaAs strained layer quantum well lasers with a small vertical divergence angle and low light power density are designed; and ridge waveguide parameters resulting in fundamental transverse mode operation are calculated. The InGaAs/GaAs/AlGaAs strained layer quantum well lasers were grown by molecular beam epitaxy. Ridge waveguide InGaAs/GaAs/AlGaAs strained layer quantum well lasers operating in the fundamental transverse mode up to 140 mW at a wavelength of 980 nm were fabricated. The lasers exhibit a differential quantum efficiency of 0.8W/A, a vertical divergence angle of 28° and a parallel divergence angle of 6.8°. |
| |
| Keywords: | high quality beam high power fundamental transverse mode molecular beam epitaxy |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
