铜与硅之间W/Mo-N薄膜的扩散阻挡层性能

研究了铜与硅之间W／Mo-N薄膜的扩散阻挡性能。在Si(100)基片上利用反应溅射沉积一层Mo-N薄膜，然后再利用直流溅射在Mo-N上面沉积Cu／W薄膜。样品在真空下退火，并利用四点探针、X射线衍射分析、扫描电镜分析、俄歇电子能谱原子深度剖析等测试方法研究了Cu／W／Mo-N／Si的热稳定性及W／Mo-N薄膜对铜与硅的扩散阻挡性能。实验分析表明，Cu／W／Mo-N／Si结构具有非常好的热稳定性，在600℃退火30min仍未发生相变，并能有效的阻挡铜与硅之间的扩散。

Diffusion barrier performance of W/Mo- N films between Cu and Si

The diffusion barrier performance of W/Mo-N films between Cu and Si was studied. Thin Mo-N film was deposited on Si (100) substrate by reactive sputtering. And the Cu/W thin films were deposited on the Mo-N film by direct current sputtering. Samples were subsequently annealed at different temperatures in vacuum condition. The thermal stability of Cu/W/Mo-N/Si and the dif- fusion barrier performance of W/Mo-N films were characterized by four-point probe measurement, X-ray diffractometry, scanning electron microscopy and Auger electron spectroscopy analyses. The results reveal that the Cu/W/Mo-N/Si structure has a good thermal stability, and the W/Mo-N films are able to prevent the diffusion reaction between Cu and Si substrate annealed at 600oC for 30 min.