|
|||||
|
|
| 掺Er硅的发光机理的探讨及其应用前景的展望 | |
| 引用本文： | 罗家俊,余明斌.掺Er硅的发光机理的探讨及其应用前景的展望[J].半导体杂志,1998,23(3):44-47,51. |
| 作者姓名： | 罗家俊 余明斌 |
| 作者单位： | 西安理工大学 |
| 摘 要： | 本文探讨了硅掺入稀土元素Ｅｒ后能发出波长为１５４０ｎｍ的光的机理，对影响其发光特性的温度猝灭现象作了初步分析，最后指出了将其实用化还必须解决的一些问题。 |
| 关 键 词： | 半导体 窗口波长 硅基材料 发光机理 掺杂 |
Investigation of Erbium-doped silicon luminescenceand prospects for applications |
|
| Authors: | Luo Jiajun Yu Mingbin Wang Yan |
| Abstract: | The mechanism of the erbium-doped silicon(EDS) emitting 15400nm light has been studied and we analyze the temperature dependence of luminescence quenching which is major obstacle to its application. We also discuss some other problems which should be resolved before it can be applied. |
| Keywords: | erbium - doped silicon(EDS) optoelectronic integrated circuits windows wavelength Temperature quenching optical fibers communication |
| 本文献已被 CNKI 维普 等数据库收录！ | |