| Pt／n—n＋-Si电极上化学沉积铁氰化镍薄膜及其应用 |
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| 引用本文： | 班彦萍,李怀祥,高琦,武怀娣. Pt／n—n＋-Si电极上化学沉积铁氰化镍薄膜及其应用[J]. 纳米科技, 2012, 0(2): 10-15 |
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| 作者姓名： | 班彦萍 李怀祥 高琦 武怀娣 |
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| 作者单位： | 山东师范大学化学化工与材料科学学院,山东济南250014 |
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| 基金项目： | 国家自然科学基金项目（21175084） |
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| 摘 要： | 在表面外延生长9μm的n型层的磷重掺杂的硅基底n—n＋一Si）结构上沉积约40nm铂（Pt），经氩气保护673K热处理30min作为半导体电极（Pt／n—n＋-Si）。将半导体电极和铁氰化钾、硫酸镍以及硝酸钠的溶液接触，沉积出稳定的铁氰化镍（NiHCF）薄膜。复合电极与Pt电极组成光电化学电池，在零偏电压条件下，通过测量该电池的光电流可检测过氧化氢。通过循环伏安和X-光电子能谱对NiHCF薄膜进行了分析与表征。
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| 关 键 词： | 化学沉积 铁氰化镍 光电流 外延硅 过氧化氢 |
Nickel Hexacyanoferrate Film by Chemical Deposition Electrode and its Application |
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| BAN Yan-ping,LI Huai-xiang,GAO Qi,WU Huai-di. Nickel Hexacyanoferrate Film by Chemical Deposition Electrode and its Application[J]. , 2012, 0(2): 10-15 |
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| Authors: | BAN Yan-ping LI Huai-xiang GAO Qi WU Huai-di |
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| Affiliation: | (College of Chemistry, Chemical Engineering and Materials Science, Shandong Normal University, Jinan 250014, China ) |
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| Abstract: | Phosphorus heavy doped silicon（n＋-Si） wafers with 9μm epitaxial layer were coated with about 40nm platinum layer, heated at 673K for 30min and then used as a substrate （Pt/n-n＋-Si） for chemical deposition. A NiHCF film was chemically deposited from mixtured solution containing potassium ferricyanide, nickel sulfate and sodium nitrate. The NiHCF modified Pt/n-n＋-Si electrode has been used for determination of hydrogen peroxide （H2O2） with a two-electrode cell in absence reference electrode by photocurrent measurements at a zero bias. The composite modified electrode as a H2O2 sensor was demonstrated with a definite stability. The NiHCF film modified Pt/n-n＋-Si electrode was characterized by cyclic voltammetry and x-ray photoelectron spectroscopy （XPS） measurements. |
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| Keywords: | chemical deposition nickel hexacyanoferrate photocurrent epitaxial silicon hydrogen peroxide |
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