金属与半导体肖特基接触势垒模型及其载流子传输机制的研究进展

肖特基结具有整流特性,在整流器和光电检测等电子元器件制造中有极其重要的应用,重点介绍了相关研究人员在金属与半导体肖特基接触势垒的形成机理、相关数学模型及其影响因素等方面的研究进展。有研究表明,肖特基势垒的形成主要是由于费米能级的钉扎,而费米能级钉扎则源于界面新相的形成或界面极化键的存在。同时,在肖特基势垒的相关模型中,热电子激发模型是目前应用最为广泛的、用于解释界面载流子传输机制的肖特基接触势垒模型。随着对接触界面载流子传输机制的深入研究,热发射-扩散、热场发射等载流子传输机制模型相继被研究者提出。另外,相关研究表明,快速退火处理可导致肖特基接触界面处的原子扩散、重排、新相生成等现象,对肖特基接触的稳定性产生重要影响。

Progress of Schottky Contact Model and Carrier Transport Mechanism at the Interface Between Metal and Semiconductor

Schottky contact was an important application in the field of the rectifier and photoelectric detection, due to its excellent rectifying behavior. In this paper, the formation mechanism, together with corresponding mathematical model and influencing factors of the Schottky contact between metal and semiconductor was reviewed in detail. The literatures showed that the formation of Schottky contact was caused by Fermi level pinning which was caused by phase formation and the existence of polarization at the interface region. Meanwhile, the thermionic emission model was the most widely used to explain the carrier transport mechanism at the interface of Schottky contact. With the further study on the carrier transport mechanism at the interface contact, the thermio-nic-diffusion and thermal field emission model were proposed by researchers. In addition, the related research exhibited that the fast annealing can lead to atoms diffusion, rearrangement and phase formation at the interface of the Schottky contact, which has an important influence on the stability of Schottky contact.