Electromigration properties of electroless plated Cu metallization |
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| Authors: | Kang H-K Cho JSH Wong SS |
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| Affiliation: | Center for Integrated Syst., Sanford Univ., CA ; |
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| Abstract: | The electromigration properties of electroless plated copper films have been evaluated under DC stress conditions. The formation of microvoids and the diffusion of copper through the seed layer caused an increase of the line resistance in the initial stage of the stressing. The current density dependence and the activation energy of the lifetime were determined |
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