| The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD |
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| 作者姓名： | TSIEN Pei-Hsin |
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| 作者单位： | Institute of |
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| 基金项目： | the National High Technology and Research Development Program(863 Program)of China(No.2002AA321230)，partially supported by the National Natural Sciences Foundation of China(No.10075072) |
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| 摘 要： | Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) were characterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction (HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventional furnace annealing and rapid thermal annealing with temperature between 750℃ and 910℃. Both strain and its relaxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported in other literatures. The rapid thermal annealing at elevated temperature between 880℃ and 910℃ for very short time had almost no influence on the strain in Si0.84Ge0.16 epilayer. However, high temperature (900℃@) furnace annealing for 1h prompted the strain in Si0.84Ge0.16 layer to relax.
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The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD |
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| TSIEN Pei-Hsin.The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD[J].Nuclear Science and Techniques,2003,14(4). |
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| Authors: | CHEN Chang-chun LIU Zhi-Hong HUANG Wen-Tao DOU Wei-Zhi ZHANG Wei TSIEN Pei-Hsin ZHU De-Zhang |
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| Abstract: | Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax. |
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| Keywords: | Strain Si/SiGe heterostructure Rutherford backscattering/Channeling (RBS/C) X-ray diffraction |
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