140 GHz 70 mW CW output power with n-type silicon single-drift impatt diodes |
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| Authors: | Wenger J. |
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| Affiliation: | Technische Universit?t München, Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, München, West Germany; |
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| Abstract: | Silicon single-drift-region impatt diodes designed to operate at D-band frequencies were fabricated with a p+ nn+ structure formed by thermal diffusion of boron. A continuous-wave output power of 70 mW at 137 GHz with a conversion efficiency of 3.2% was obtained. The diodes were packaged with a quartz standoff configuration on a copper heatsink and mounted into a cap-type waveguide resonator. |
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