砷化镓衬底CVD金刚石薄膜辐射探测器的研究

在砷化镓（GaAs）衬底上采用微波等离子体化学气相沉积法（MPCVD）制备了金刚石薄膜,并对制备的薄膜进行抛光、表面氧化、退火等处理以提高薄膜质量,再用磁控溅射法在薄膜表面沉积金（Au）铝（Al）电极,制备了简易的CVD金刚石薄膜辐射探测器。采用扫描电子显微镜（SEM）和拉曼光谱（Raman）技术对制得的金刚石薄膜质量进行了分析研究。结果表明,薄膜为100]晶面取向,表面平整,杂质含量低。采用5.9keV55FeX射线对所制备的探测器进行辐射实验,测出其光电流和暗电流特性,从而对辐射探测器性能进行了表征。

RESERCH ON GaAs BASED CVD DIAMOND FILM RADIATION DETECTOR

Diamond films were deposited on GaAs by Microwave Plasma enhanced Chemical Vapor Deposition （MPCVD） method. The quality of the deposited films were optimized by polishing, surface oxidation and annealing firstly, then Au and Al electrodes were deposited on the surface by the radio frequency and magnetron sputtering method, and simple diamond film radiation detectors were prepared finally. SEM and Raman spectra were used to investigate the quality of deposited diamond films, results showed that the films were 100] oriented, smooth and high-quality. The property of the prepared detectors was characterized by the photo-current and dark-current of the radiation detectors when radiated by 5.9 ke V^55 Fe X-ray.