Engineering the metal–organic interface by transferring a high-quality single layer graphene on top of organic materials |
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| Affiliation: | 1. National Synchrotron Radiation Laboratory and Collaborative Innovation Center of Suzhou Nano Science and Technology, University of Science and Technology of China, Hefei 230029, PR China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, PR China;3. Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Kyungbuk 790-784, South Korea;4. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;1. Department of Chemistry, Faculty of Science, Okayama University, 3-1-1 Tsushimanaka, Kita-ku, Okayama 700-8530, Japan;2. Division of Chemistry and Material Science, Graduate School of Engineering, Nagasaki University, 1-14 Bunkyomachi, Nagasaki 852-8521, Japan;3. Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan;4. Institute for Integrated Cell-Material Sciences (iCeMS), Kyoto University, Yoshidaushinomiyacho, Sakyou-ku, Kyoto 606-8501, Japan;1. Department of Chemistry and Centre for NanoScience (CeNS), University of Munich (LMU), Butenandtstrasse 5-13 (E), 81377 Munich, Germany;2. J. Heyrovský Institute of Physical Chemistry, v.v.i., Academy of Sciences of the Czech Republic, Dolejskova 3, 18223 Prague 8, Czech Republic;1. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;2. Department of Environmental and Chemical Engineering, Tangshan College, Tangshan 063000, China |
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| Abstract: | We present a new method for transferring chemical vapor deposition (CVD)-grown graphene onto the surfaces of organic materials directly. Raman and near edge X-ray absorption fine structure measurements prove that high-quality and single layer graphene/organic thin films can be obtained with minimized impurity introduction. In-situ synchrotron radiation photoemission spectroscopy combined with ultraviolet photoelectron spectroscopy experiments demonstrate that the inserted graphene can not only act as a buffer layer to reduce the interfacial chemical reactions between the deposited Al and organic materials, but also tune the metal/organic interface electronic structure significantly. This new graphene transfer technique may have a great potential in the application of engineering the metal–organic interface properties, which is one of the key technologies for the optimal design and fabrication of organic electronic and optoelectronic devices. |
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