The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity |
| |
| Affiliation: | 1. Department of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;2. State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;1. Science and Technology on Microsystem Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, PR China;2. University of Chinese Academy of Sciences, Beijing 100049, PR China;1. Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Doha, Qatar;2. School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA;3. Department of Chemistry and Physics, Purdue University, West Lafayette, IN 46323, USA;4. College of Science and Engineering, Hamad Bin Khalifa University, Doha, Qatar;1. Department of Electrical and Computer Engineering, Clemson University, SC 29625, USA;2. Department of Physics and Astronomy, Clemson University, SC 29625, USA;3. Department of Electrical and Computer Engineering, Old Dominion University, VA 23505, USA;1. Electronic Department, LEM Laboratory, Université de Jijel, B.P. 98, Ouled Aissa, 18000, Jijel, Algeria;2. Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Louvain, Place du Levant, 3, B-1348, Louvain-la-Neuve, Belgium;1. Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, China;2. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;3. Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China;1. Nano Fusion Technology Research Group, Division of Frontier Fibers, Institute for Fiber Engineering (IFES), Interdisciplinary Cluster for Cutting Edge Research (ICCER), Shinshu University, Tokida 3-15-1, Ueda, Nagano, 386-8567, Japan;2. Department of Chemistry, Sungkyunkwan University, Suwon, 16419, Republic of Korea |
| |
| Abstract: | It is normally assumed that the sheet resistances under and outside the metal contact are identical when deriving specific contact resistivity of graphene from transmission line model. We considered the contact end resistance and obtained the sheet resistance under contact of 670 Ω/□, which is much different from that outside the contact of 1840 Ω/□. Considering the difference, the value of specific contact resistivity is determined to be 3.3 × 10−6 Ω cm2, which is three times as large as the unmodified value. This indicates that the difference between the sheet resistances under and outside the contact affects the derived specific contact resistivity of graphene significantly. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
