首页 | 本学科首页   官方微博 | 高级检索  
     


Influence and effectivity of VC and Cr3C2 grain growth inhibitors on sintering of binderless tungsten carbide
Affiliation:1. College of Mechanical Engineering, Donghua University, Shanghai 201620, PR China;2. Engineering Research Center of Advanced Textile Machinery, Ministry of Education, Shanghai 201620, PR China;1. Key Laboratory on Deep GeoDrilling Technology of the Ministry of Land and Resources, School of Engineering and Technology, China University of Geosciences, Beijing 100083, PR China;2. State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, PR China;1. Materials & Coating Development Center, Research & Development Division, Advanced Materials & Tools Company, Mitsubishi Materials Corporation, 1511 Furumagi, Joso-shi, Ibaraki 300-2795, Japan;2. Research & Development Division, Advanced Materials & Tools Company, Mitsubishi Materials Corporation, 3–2, Otemachi 1-chome, Chiyoda-ku, Tokyo 100-8117, Japan
Abstract:For the production of hard, high temperature and abrasion resistant parts, like water-jet nozzles or pressing tools for forming glass lenses, binderless cemented carbide is used. In this work, the consolidation of tungsten carbide with additions of VC and Cr3C2 grain growth inhibitors is studied. Tungsten carbide powder dry or wet milled was consolidated by dry pressing, debindering and gas pressurized sintering and, alternatively, by spark plasma sintering. The effect of adding VC and Cr3C2 to binderless tungsten carbide on the grain growth was studied with contents being 0; 0.1; 0.3; 0.5; 0.7 and 1.0 wt.%. Samples with an ultrafine microstructure free of abnormal grain growth, a hardness of 25.5 GPa and a fracture toughness of 7.2 MPa·m1/2 were archived by conventional sintering. Both carbides reduce grain growth, but with Cr3C2 a finer microstructure can be achieved at lower amounts. Compared to the same amount of Cr3C2, the addition of VC results in smaller grains but lower hardness and fracture toughness.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号