| Properties of Evaporated Si_(1-x)Sn_x and Si_(1_x)Sn_x:H Amorphous Alloys |
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| 引用本文： | M. Vergnat,M.Gerl+,Laboratoire de Métallurgie Physique et Science des Maériaux (U.R.A.au C.N.R.S.No. ),Universite de Nancy,France. Properties of Evaporated Si_(1-x)Sn_x and Si_(1_x)Sn_x:H Amorphous Alloys[J]. 材料科学技术学报, 1993, 9(2): 79-88 |
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| 作者姓名： | M. Vergnat M.Gerl+ Laboratoire de Métallurgie Physique et Science des Maériaux (U.R.A.au C.N.R.S.No. ) Universite de Nancy France |
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| 作者单位： | Laboratoire de Métallurgie Physique et Science des Maériaux (U.R.A.au C.N.R.S.No. 155) Universite de Nancy 1 France，Laboratoire de Métallurgie Physique et Science des Maériaux (U.R.A.au C.N.R.S.No. 155) Universite de Nancy 1 France |
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| 摘 要： | Amorphous Si_(1-x)Sn_x alloys have been prepared by co-evaporation onto substrates maintained atliquid nitrogen temperature. Their atomic structure is investigated using density measurements,scanning high-energy electron diffraction and Mossbauer spectroscopy. The optical and electricalproperties are reported. Then, a method to hydrogenate the films during the evaporation process isdescribed and applied to the preparation of amorphous semiconductors from pure silicon to pure tin.Finally, multilayers of type Si / Si:H / ... or Si:H / Si:D / ... are studied. The modulation of hydrogen isshown by low-angle neutron scattering and measurements of hydrogen diffusivity are presented.
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| 收稿时间： | 1993-03-28 |
Properties of Evaporated Si_(1-x)Sn_x and Si_(1_x)Sn_x:H Amorphous Alloys |
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| M. Vergnat,M.Gerl+,Laboratoire de Métallurgie Physique et Science des Maériaux ,Universite de Nancy,France. Properties of Evaporated Si_(1-x)Sn_x and Si_(1_x)Sn_x:H Amorphous Alloys[J]. Journal of Materials Science & Technology, 1993, 9(2): 79-88 |
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| Authors: | M. Vergnat M.Gerl+ Laboratoire de Métallurgie Physique et Science des Maériaux Universite de Nancy France |
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| Affiliation: | U.R.A.au C.N.R.S.No. 155 |
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| Abstract: | Amorphous Si_(1-x)Sn_x alloys have been prepared by co-evaporation onto substrates maintained at liquid nitrogen temperature. Their atomic structure is investigated using density measurements, scanning high-energy electron diffraction and Mossbauer spectroscopy. The optical and electrical properties are reported. Then, a method to hydrogenate the films during the evaporation process is described and applied to the preparation of amorphous semiconductors from pure silicon to pure tin. Finally, multilayers of type Si / Si:H / ... or Si:H / Si:D / ... are studied. The modulation of hydrogen is shown by low-angle neutron scattering and measurements of hydrogen diffusivity are presented. |
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| Keywords: | amorphous alloy evaporation hydrogenation |
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