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| 基于SiGe虚拟衬底的低场迁移率提升140%的应变Si沟道NMOS器件 Cui Wei(崔伟)1,2,Tang Zhaohuan(唐昭焕)2, Tan Kaizhou(谭开洲)2, Zhang Jing(张静)2, | |
| 引用本文： | 崔伟,唐昭焕,谭开洲,张静,钟怡,胡辉勇,徐世六,李平,胡刚毅.基于SiGe虚拟衬底的低场迁移率提升140%的应变Si沟道NMOS器件 Cui Wei(崔伟)1,2,Tang Zhaohuan(唐昭焕)2, Tan Kaizhou(谭开洲)2, Zhang Jing(张静)2,[J].半导体学报,2012,33(9):094005-4. |
| 作者姓名： | 崔伟 唐昭焕 谭开洲 张静 钟怡 胡辉勇 徐世六 李平 胡刚毅 |
| 基金项目： | 国家基础研究重大项目基金 |
| 摘 要： | 本文研究了一种应变SiGe沟道的NMOS器件，通过调整硅帽层、SiGe缓冲层，沟道掺杂和Ge组分变化，并采用变能量硼注入形成P阱的方式，成功完成了应变NMOS器件的制作。测试结果表明应变的NMOS器件在低场(Vgs=3.5V, Vds=0.5V)条件下，迁移率极值提升了140%，而PMOS器件性能保持不变。文中对硅基应变增强机理进行了分析。并利用此NMOS器件研制了一款CMOS倒向器，倒向器特性良好, 没有漏电，高低电平转换正常。 |
| 关 键 词： | NMOSFET SiGe 应变硅 衬底 虚拟 低场 CMOS反相器 迁移率 |
| 修稿时间： | 5/7/2012 2:49:01 PM |
A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate |
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| Cui Wei,Tang Zhaohuan,Tan Kaizhou,Zhang Jing,Zhong Yi,Hu Huiyong,Xu Shiliu,Li Ping and Hu Gangyi.A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J].Chinese Journal of Semiconductors,2012,33(9):094005-4. | |
| Authors: | Cui Wei Tang Zhaohuan Tan Kaizhou Zhang Jing Zhong Yi Hu Huiyong Xu Shiliu Li Ping and Hu Gangyi |
| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, Chengdu 610023, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China 2. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China 3. Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices, Microelectronics School, Xidian University, Xi'an 710071, China 4. State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, Chengdu 610023, China |
| Abstract: | A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics. |
| Keywords: | CMOS inverter strained Si mobility enhancement SiGe virtual substrate relaxed layer |
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