| 用于Si基片上外延BST薄膜的缓冲层的研究进展 |
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| 引用本文： | 魏贤华,张鹰,梁柱,黄文,李言荣. 用于Si基片上外延BST薄膜的缓冲层的研究进展[J]. 材料导报, 2005, 19(5): 97-101 |
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| 作者姓名： | 魏贤华 张鹰 梁柱 黄文 李言荣 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054 |
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| 摘 要： | 由于界面之间的扩散,很难取得在Si基片上BST薄膜的外延.在这种异质结之间,稳定的缓冲层起着良好的阻挡作用以及结构上的延伸功能.综述了用于外延BST薄膜的缓冲层材料的意义和要求,及国内外通过缓冲层来控制界面以及薄膜的外延取向而获得高质量薄膜的最新研究动态,展望了今后用于外延BST薄膜的缓冲层材料发展的趋势.
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| 关 键 词： | 缓冲层 Si基片 BST薄膜 异质外延 界面 |
Research Progress of Buffer Layers Used in Heteroepitaxial Growth of BST Thin Film on Silicon Substrate |
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| WEI Xianhua,ZHANG Ying,LIANG Zhu,HUANG Wen,LI Yanrong. Research Progress of Buffer Layers Used in Heteroepitaxial Growth of BST Thin Film on Silicon Substrate[J]. Materials Review, 2005, 19(5): 97-101 |
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| Authors: | WEI Xianhua ZHANG Ying LIANG Zhu HUANG Wen LI Yanrong |
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| Abstract: | It is difficult to obtain the heteroepitaxial growth of BST thin film on silicon substrate due to the interface diffusion.Stable buffer layers acting as the barriers of the interface can make BST films grow epitaxially.In different experimen- tal method,the quality of the film can be improved by optimizing the experimental conditions,which can control the interface and orientation of the film. |
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| Keywords: | buffer layer silicon substrate BST thin film heteroepitaxy interface |
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