| MOS器件中热载流子效应有关电场的计算方法 |
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| 引用本文： | 朱建纲,张卫东.MOS器件中热载流子效应有关电场的计算方法[J].西安电子科技大学学报,1998,25(1):32-35. |
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| 作者姓名： | 朱建纲 张卫东 |
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| 作者单位： | 西安电子科技大学微电子所 |
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| 摘 要： | 采用线性近似的方法，对ＭＯＳ器件中的沟道水平加速电场及栅氧化层中的垂直电场进行了研究，给出了一种较精确的简便计算方法．在该电场模型的基础上，建立了整个热载流子效应的模型框架．
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| 关 键 词： | MOS场效应晶体管 沟道水平电场 栅氧化层垂直电场 |
A method for calculating the electronic fields in the hot carrier effects of MOSFET |
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| Zhu Jiangang,Zhang Weidong,Hao Yue.A method for calculating the electronic fields in the hot carrier effects of MOSFET[J].Journal of Xidian University,1998,25(1):32-35. |
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| Authors: | Zhu Jiangang Zhang Weidong Hao Yue |
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| Abstract: | The lateral electronic field in the channel and the normal electronic field in the gate oxide of a MOSFET are studied primarily with the help of linear approximation, and then a simple and accurate method for calculating these fields is given. On the basis of this electronic field model, the complete model of the hot carrier effects can be established. |
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| Keywords: | MOSFET lateral electronic field in channel normal electronic field in gate oxide |
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