| 改善栅控晶闸管关断特性的一种新结构 |
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| 引用本文： | 戴显英,张鹤鸣.改善栅控晶闸管关断特性的一种新结构[J].西安电子科技大学学报,1998,25(2):234-238. |
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| 作者姓名： | 戴显英 张鹤鸣 |
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| 作者单位： | 西安电子科技大学微电子所 |
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| 摘 要： | 提出了一种ＭＯＳ栅晶闸管的新的关闭栅结构——耗尽型ＭＯＳ关闭栅，有效地改善了多元胞器件元胞关断的非均匀性．
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| 关 键 词： | MOS栅晶闸管 耗尽型MOS关闭栅 关断均匀性 |
A new structure to improve the turn off performance of the MOS gated thyristor |
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| Dai Xianying,Zhang Heming,Wang Wei.A new structure to improve the turn off performance of the MOS gated thyristor[J].Journal of Xidian University,1998,25(2):234-238. |
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| Authors: | Dai Xianying Zhang Heming Wang Wei |
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| Abstract: | The maximum controllable current density of single cell MOS Gated thyristor devices is large but for the multicellular devices there is a significant reduction. Nonuniform turn off of cells has been shown to limit the maximum controllable current for large area device stractures. A new structure of MOS Gate to turn off thyristor depletion mode MOS Gate is described in this paper. The depletion mode MOS Gate can improve the nonuniform turn off of a multicellular device. |
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| Keywords: | MOS Gated thyristor depletion mode MOS turn off gate uniform turn off |
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