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无线传感器网络SoC芯片电源模块LDO的设计
引用本文:王萍.无线传感器网络SoC芯片电源模块LDO的设计[J].仪器仪表用户,2011,18(1):54-57.
作者姓名:王萍
作者单位:九江学院电子工程学院,九江,332005
摘    要:采用SMIC 0.18μm CMOS工艺,设计了一种应用于无线传感器网络SoC芯片中射频收发机模块的LDO,具有低温度系数,低静态电流和高电源电压抑制比。其电源电压抑制比大于58dB在1kHz。在-40-+85℃的范围内,温度系数为6.87ppm/℃。电源电压在2.0-3.6V的变化范围内,LDO能提供1.8V的稳定输出电压,100mA的输出电流。芯片面积为0.168mm2,最大静态电流为221.9μA。测试结果表明带隙基准的输出电压为0.429V,LDO的输出电压是1.850V。

关 键 词:无线传感器网络SoC  线性降压变换器  误差放大器  带隙基准源

Design of LDO for WSN SoC system
WANG Ping.Design of LDO for WSN SoC system[J].Electronic Instrumentation Customer,2011,18(1):54-57.
Authors:WANG Ping
Affiliation:WANG Ping(School of Electronic Industy and Engineering,Jiujiang University,Jiujiang 332005,China)
Abstract:In this paper,a LDO with high power supply rejection ratio,low temperature coefficient,and low quiescent current has been developed,which applies for RF transceiver of wireless sensor network SoC.PSRR is more than 58dB at 1kHz.Under a wide range of temperature from-40 to +85℃,the temperature coefficient is 6.87ppm/℃.With the power supply from 2.0 to 3.6V,it can provide a stable output voltage 1.8V,and output current 100mA.The LDO chip area is about 0.168 mm2,and maximum quiescent current is 221.9μA.The measured results show that the output of bandgap reference is 0.429V,and that of LDO is 1.850V.
Keywords:wireless sensor network SoC  LDO  error amplifier  bandgap reference  
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