| 小尺寸NMOS和PMOS SEU敏感性对比分析 |
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| 引用本文： | 汪俊,师谦,王祥傲.小尺寸NMOS和PMOS SEU敏感性对比分析[J].电子质量,2011(2):14-16. |
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| 作者姓名： | 汪俊 师谦 王祥傲 |
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| 作者单位： | 滁州学院电子信息工程系;电子元器件可靠性物理及其应用技术国家级重点实验室; |
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| 基金项目： | 滁州学院科研项目(2010kj012B) |
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| 摘 要： | 使用软件模拟的方法对NMOS和PMOS的单粒子翻转(SEU)特性进行份真,通过在阱内外碰撞的两种情况下对小尺寸NMOS和PMOS的SEU敏感性进行对比可知,对于深亚微米阶段相同工艺的器件,在阱外碰撞时,NMOS一定比PMOS对SEU敏感;但对于阱内碰撞,NMOS和PMOS对SEU的敏感性要视具体情况而定.
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| 关 键 词： | 单粒子翻转 线能量传输 阱内碰撞 阱外碰撞 |
A Comparative Analysis of SEU Sensitivity in Small Dimension NMOS and PMOS |
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| Wang Jun,Shi Qian,Wang Xiang-ao.A Comparative Analysis of SEU Sensitivity in Small Dimension NMOS and PMOS[J].Electronics Quality,2011(2):14-16. |
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| Authors: | Wang Jun Shi Qian Wang Xiang-ao |
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| Affiliation: | Wang Jun1,Shi Qian2,Wang Xiang-ao1(1.department of electronical and information Engeering in chuzhou university,Anhui Chuzhou 239000,2.Relibility physics and application Technology of electronic product,Guangdong Guangzhou 510610) |
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| Abstract: | Using the computer simulation method to investigate SEU characteristics of NMOS and PMOS,though compared the sensitivity of small dimension NMOS and PMOS in two situation——outside-the-well strike and inside-the well strike.We concluded that NMOS is more sensitive to PMOS when in the condition of outside-the well strike;but the SEU sensitivity of inside-the-well NMOS and PMOS need be ascertained at the concrete conditions.When the two device at same technology in Deep submicron stages. |
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| Keywords: | single event upset linear energy transfer inside-the-well strike outside-the well strike |
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