| 基片位置对MWPCVD制备金刚石薄膜的影响 |
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| 引用本文： | 俞世吉,丁振峰,马腾才.基片位置对MWPCVD制备金刚石薄膜的影响[J].真空科学与技术学报,2000,20(2). |
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| 作者姓名： | 俞世吉 丁振峰 马腾才 |
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| 作者单位： | 大连理工大学三束材料改性国家重点联合实验室!大连116024(俞世吉，丁振峰，马腾才)，中国科学院等离子体物理研究所!合肥230031(邬钦崇) |
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| 摘 要： | 在石英钟罩式微波等离子体化学气相沉积实验装置中研究了基片位置对金刚石薄膜沉积质量的影响。扫描电子显微镜显微形貌观察和激光喇曼谱分析表明 ,对微波等离子体化学气相沉积制备金刚石薄膜而言 ,基片位置处于近等离子体球下游区域将有利于改善金刚石薄膜沉积质量。
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| 关 键 词： | 微波等离子体化学气相沉积 金刚石薄膜 基片位置 |
Influence of Substrate Position on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition |
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| Yu Shiji,Ding Zhenfeng,Ma Tengcai.Influence of Substrate Position on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition[J].JOurnal of Vacuum Science and Technology,2000,20(2). |
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| Authors: | Yu Shiji Ding Zhenfeng Ma Tengcai |
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| Abstract: | Diamond films were synthesized by microwave plasma chemical vapor deposition (MWPCVD) in a quartz bell jar.Influence of substrate positions on the films growth was studied with scanning electron microscopy (SEM) and laser Raman spectroscopy.We found that quality of the diamond films grown by MWPCVD can be improved by positioning the substrate near the down stream of the plasma ball. |
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| Keywords: | Microwave plasma chemical vapor deposition Diamond film Substrate position |
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