Characteristics of field-induced-drain (FID) poly-Si TFTs with highon/off current ratio |
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Authors: | Tanaka K Nakazawa K Suyama S Kato K |
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Affiliation: | NTT Interdisciplinary Res. Lab., Tokyo; |
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Abstract: | The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) with a field-induction-drain (FID) structure using an inversion layer as a drain are investigated. The FID structure not only reduces the anomalous leakage current, but also maintains a high on current. An off current of 1.5 pA/μm and an on/off current ratio of 107 (Vd=10, Vg =-20 V) are successfully obtained. These characteristics result from good junction characteristics between the p channel and n+ inversion layer. Reducing the threshold voltage of the FID region allows a simple circuit configuration for the FID TFTs |
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