| ICP—AES测定金属硅中的硼 |
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| 引用本文： | 卞大勇. ICP—AES测定金属硅中的硼[J]. 天津化工, 2013, 27(1): 41-42 |
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| 作者姓名： | 卞大勇 |
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| 作者单位： | 天津华北地质勘查局,天津,300181 |
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| 摘 要： | 本文以氢氟酸和硝酸在聚四氟乙烯容量瓶中直接溶解样品,最大限度避免元素挥发损失。电感耦合等离子体发射光谱仪,测定金属硅中的杂质元素硼。运用了干扰元素校正程序IEC,替代基体匹配法,消除元素干扰,方便快捷,可操作性更强。实验结果表明,回收率为96％-104％,相对标准偏差（RSD）（n=11）：2．09％
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| 关 键 词： | ICP-AES 金属硅 硼 元素干扰校正程序IEC |
Determination of B impurity in Silicon Metal by ICP-AES |
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| BIAN Da-Yong. Determination of B impurity in Silicon Metal by ICP-AES[J]. Tianjin Chemical Industry, 2013, 27(1): 41-42 |
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| Authors: | BIAN Da-Yong |
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| Affiliation: | BIAN Da-Yong(TianJin north China geological exploration bureau,Tianjin 300181) |
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| Abstract: | Established a method that determined of B in 5ihcon Metal by ICP-AES.Samples were resolved by HF-HNO3 in plastic bottle,maximum of efficiency to avoid element loss,application IEC to eliminate interference element.Retrieve rate in the rang of 96%-104%,RSD（n=11）：2.09.The method operate easy,analysis fast,exact result. |
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| Keywords: | ICP-AES Silicon Metal B Interference Element Correetion（IEC） |
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