Li-doped Cu2O/ZnO heterojunction for flexible and semi-transparent piezoelectric nanogenerators |
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| Affiliation: | 1. Physics Department, M.I.E.T Engineering College, Trichy, India;2. PG and Research Department of Physics, Periyer E.V.R College, Trichy, India;3. Department of physics, Loyola College, Mettala, Namakkal 636 202, India;4. PG and Research Department of Physics, Arul Anandar College, Karumathur, Madurai, India;5. Millimeter-Wave Innovation Technology Research Centre (MINT), Dongguk University-Seoul, Seoul 04620, Republic of Korea;6. Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha 61413, Saudi Arabia |
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| Abstract: | We have investigated the characteristics of p-type Li-doped Cu2O (LCO) films grown by radio frequency magnetron sputtering to use as p-n heterojunction for flexible and semi-transparent piezoelectric nanogenerators (PENGs). Electrical, optical, morphological properties of the LCO films were examined as a function of Ar/O2 flow ratio as well as work function. The LCO films grown at Ar/O2 ratio of 20/4 sccm film showed a p-type behavior with resistivity of 2.12 Ω-cm, mobility of 0.364 cm2/V-s, and carrier concentration of 8.07×1019 cm-3. To overcome the piezoelectric potential screening effect of conventional ZnO-based PENGs, the p-type LCO layer was employed. Due to the enhanced piezoelectric potential coupled with the reduced total capacitance, the PENG with a p-LCO/n-ZnO heterojunction demonstrates the much higher output power up to ~52 μW than PENG only with ZnO layer (7 μW). The improved output power of PENGs indicates that sputtering of the p-type LCO layer on the n-type ZnO is the effective method to overcome the limit of the ZnO-based PENGs. |
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| Keywords: | p-n heterojunction Flexible and semi-transparent piezoelectric nanogenerators ZnO Output power |
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