High temperature dielectrics in the ceramic system K0.5Bi0.5TiO3-Ba(Zr0.2Ti0.8)O3-Bi(Zn2/3Nb1/3)O3 |
| |
| Affiliation: | 1. Institute for Materials Research, School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, UK;2. Department of Physics, Islamia College Peshawar, KP, Pakistan;1. School of Advanced Materials Engineering, Changwon National University, Gyeongnam 641-773, Republic of Korea;2. Department of Physics, Abdul Wali Khan University, Mardan, KPK, Pakistan;3. Department of Physics, Changwon National University, Gyeongnam 641-773, Republic of Korea;1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454003, China;2. Electronic Materials Research Laboratory, Xi''an Jiaotong University, Xi’an 710049, China;3. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;1. CAS Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China;2. College of Physics and Energy, Fujian Normal University, Fuzhou 350117, China;3. Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China;4. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China;1. College of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, People’s Republic of China;2. The State Key Lab of High Performance Ceramics and Superfinemicrostructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, People’s Republic of China |
| |
| Abstract: | Ceramics in the system (1-x)0.5K0.5Bi0.5TiO3-0.5Ba(Zr0.2Ti0.8)O3]-xBi(Zn2/3Nb1/3)O3 have been fabricated by a solid-state processing route for compositions x≤0.3. The materials are relaxor dielectrics. The temperature of maximum relative permittivity, Tm, decreased from 150 °C for composition x=0, to 70 °C for x=0.2. The x=0.2 sample displayed a wide temperature range of stable relative permittivity, εr, such that εr=805±15% from ?20 to 600 °C (1 kHz). Dielectric loss tangent was ≤0.02 from 50 °C to 450 °C (1 kHz), but due to the tanδ dispersion peak, the value increased to 0.09 as temperatures fell from 50 °C to ?20 °C. Values of dc resistivity were of the order of ~109 Ω m at 300 °C. These properties are promising in the context of developing new high temperature capacitor materials. |
| |
| Keywords: | Temperature stable dielectrics Ceramics capacitors Resistivity |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
