Enhanced electrical and photocurrent characteristics of sol-gel derived Ni-doped PbTiO3 thin films |
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| Affiliation: | 1. Department of Physics, Himachal Pradesh University, Shimla 171005, India;2. National Physical Laboratory, New Delhi 110012, India;1. The Education Ministry Key Laboratory of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234, China;2. Shanghai University of Electric Power, Shanghai 201303, China;1. Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province, Institute of Surface Micro and Nano Materials, Xuchang University, Henan 461000, PR China;2. College of Chemistry and Chemical Engineering, Xuchang University, Henan 461000, PR China;1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;2. Laboratory for Microstructures, Shanghai University, 99 Shangda Road, Shanghai 200444, China;1. National Centre for Physics, Quaid-i-Azam University Campus, Islamabad 44000, Pakistan;2. Department of Physics, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh;3. Department of Physics, Quaid-i-Azam University, Islamabad 4400, Pakistan |
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| Abstract: | Partial substitution of group 10 metal for titanium is predicted theoretically to be one of the most effective ways to decrease the band gap of PbTiO3-based ferroelectric photovoltaic materials. It is therefore of interest to experimentally investigate their ferroelectric and photovoltaic properties. In this work, we focus on the electrical and photocurrent properties of Ni-doped PbTiO3 thin films prepared via a sol-gel route. The nickel incorporation does not modify the crystalline structure of PbTiO3 thin film, but it can increase the dielectric constant, ferroelectric polarization and photocurrent, and simultaneously decrease the band gap. The maximum remnant polarization (Pr) of 58.1 μC/cm2 is observed in PbTi0.8Ni0.2O3 thin film, and its photocurrent density is improved to be approximately one order larger than that of PbTiO3 thin film and simultaneously exhibits the polarization-dependent switching characteristic, which may be a promising choice for ferroelectric photovoltaic applications. |
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| Keywords: | Electrical properties Ferroelectric photovoltaic Photocurrent |
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