Fully solution-processed metal oxide thin-film transistors via a low-temperature aqueous route |
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| Affiliation: | 1. Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China;2. Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China;3. Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, China;1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791, Republic of Korea;2. Department of Materials Science and Engineering, University of Wisconsin—Madison, Madison, WI 53706, USA;1. College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;2. Electronic Ceramics Center, DongEui University, Busan 614-714, South Korea;3. Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal;1. College of Physics, Qingdao University, Qingdao 266071, China;2. College of Electronic & Information Engineering, Qingdao University, Qingdao 266071, China;3. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;4. Electronic Ceramics Center, DongEui University, Busan 614-714, South Korea;1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, China;2. Department of Material Science and Engineering, Qilu University of Technology, Jinan 250353, China;1. College of Physics Science, Qingdao University, Qingdao 266071, China;2. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;3. Electronic Ceramics Center, DongEui University, Busan 614-714, Republic of Korea;4. College of Chemical Science and Engineering, Qingdao University, Qingdao 266071, China |
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| Abstract: | We report a facile and low-temperature aqueous route for the fabrication of various oxide thin films (Al2O3, In2O3 and InZnO). A detail study is carried out to reveal the formation and properties of these sol-gel-derived thin films. The results show that the water-based oxide thin films undergo the decomposition of nitrate group as well as conversion of metal hydroxides to form metal oxide framework. High quality oxide thin film could be achieved at low temperature by this aqueous route. Furthermore, these oxide thin films are integrated to form thin-film transistors (TFTs) and the electrical performance is systematically studied. In particular, we successfully demonstrate In2O3/Al2O3 TFTs with high mobility of 30.88 cm2 V?1 s?1 and low operation voltage of 4 V at a maximum processing temperature of 250 °C. |
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| Keywords: | Solution-processed Metal oxide thin-film transistors Low-temperature Aqueous route |
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