Solution-based synthesis of dense,large grained CuIn(S,Se)2 thin films using elemental precursor |
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| Affiliation: | 1. Solibro Research AB, Vallvägen 5, SE-756 51 Uppsala, Sweden;2. Solibro Hi-Tech GmbH, Sonnenallee 32-36, 06766 Bitterfeld-Wolfen, Germany;1. Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan, ROC;2. Advanced Research Center of Green Materials Science and Technology, Taipei 10617, Taiwan, ROC;3. Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, ROC;1. Clean Energy Research Center, Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea;2. Graduate School of Energy and Environment, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea;3. Department of Material Science and Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea |
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| Abstract: | Compared with the expensive and complicated vacuum techniques, the solution-based process to deposit I-III-VI2 chalcogenide thin films (I=Cu, III=In or Ga, VI=S or Se) has attracted great interests due to its lower cost, higher scalable production and better application in flexible substrate. Herein, a low-toxic and high-active mixture solvent comprised of 1, 2-ethanedithiol and 1,2-ethylenediamine is utilized to dissolve elemental Cu, In and S powders at 60 °C, forming the CuInS2 (CIS) precursor solution. After spin coating and annealing in a both Ar gas and selenium atmosphere, a dense and large-grained chalcopyrite CuIn(S,Se)2 (CISSe) thin films with a close-packed grain size of ~800 nm are prepared, eliminating a undesired fine fine-grained bottom layer. In addition, the selenization temperature of the CISSe thin films is also discussed, which influences the phase composition, crystallinity and morphology of CISSe thin films. Photovoltaic device of the CISSe-based thin films is fabricated, obtaining a power conversion efficiency of 6.2% with an active cell area of 0.5 cm2 under AM 1.5 illumination. |
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| Keywords: | Solution process Thin films Solar cell Elemental precursor |
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