Impact of tellurium on glass transition and crystallization in the Ge-Se-Te-Bi system |
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| Affiliation: | 1. Department of Materials Science and Engineering, Korea Aerospace University, Gyeonggi 412-791, Republic of Korea;2. Transparent Transducer and UX Creative Research Center, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea;3. Department of Materials Science and Engineering, Pohang University of Science and Technology, Gyeongbuk 790-784, Republic of Korea;4. Ultra Precision Optics Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea;1. Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, China;2. Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang 315211, China;1. Department of Materials Science and Engineering, Korea Aerospace University, Gyeonggi 412-791, Republic of Korea;2. Transparent Transducer and UX Creative Research Centre, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea;1. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116, China;2. Centre for Ultrahigh-bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2600, Australia;3. Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85712, USA |
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| Abstract: | Samples with compositions of Ge20Se67?xTexBi13 (x=0, 5, 10, 15 and 20 mol%) were prepared and characterized by XRD, Raman spectroscopy and DSC. XRD patterns and Raman spectra present consistent evidences of glass transition and crystallization in association with the variation of the structure network due to the substitution of Te for Se. Precipitation of thermoelectric (TE) crystals experiences an evolution from Bi2Se2Te (BST) to Bi2SeTe2 (BTS) phases with the increasing Te content. Based on DSC data performed at five heating rates, crystallization kinetics is analyzed by using Kissinger's relation, Ozawa model and Augis-Bennett approximation. Different methods show the identical evaluations of characteristic activation energies (Ec), while additional parameters of frequency factor (K0) and Avrami exponent (n) are available with AB method. In particular, calculated Ec and K0 demonstrate that with the substitution of Se by Te the crystallization process of the target TE BST crystal phase is much enhanced while that of the undesired GeSe2 phase is slightly hindered. |
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| Keywords: | Chalcogenide glasses Thermoelectric crystals Crystallization kinetics |
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