UV photodetection properties of pulsed laser deposited Cu-doped ZnO thin film |
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| Affiliation: | 1. Convergence of IT Devices Institute, Dong-Eui University, Busan 47340, South Korea;2. Department of Radiological Science, Dong-Eui University, Busan 47340, South Korea;1. Erbil Polytechnical University, Shaqlawa Technical Institute, Erbil, Iraq;2. Kahrmanmara? Sütçü Imam University, Department of Bioscience and Engineering, Kahrmanmara?, Turkey;3. Sinop University, Department of Electrical and Electronics Engineering, Faculty of Engineering, Sinop, Turkey;4. Kahrmanmara? Sütçü Imam University, Physics Department, Faculty of Science and Arts, Kahrmanmara?, Turkey;5. Nanoscience and Nanotechnology Laboratory, Firat University, Elazig, Turkey;1. School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysia;2. Institute of Nano-Optoelectronics Research and Technology (INOR), USM, 11800, Penang, Malaysia;1. School of Physics, University Sains Malaysia, Penang 11800, Malaysia;2. Department of Physics, College of Science, University of Basrah, Basrah, Iraq;1. Malek-Ashtar University of Technology, Tehran, Iran;2. Young Researchers and Elite Club, South Tehran Branch, Islamic Azad University, Tehran, Iran;3. Department of Physics, University of Kashan, Kashan, Iran;1. Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Xi’an Jiaotong University, Xi’an 710049, China;2. State Key Laboratory of Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China |
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| Abstract: | Nanocrystalline undoped and 2 at% copper (Cu) doped zinc oxide (ZnO) thin films were successfully grown onto SiO2/n-Si substrates at 600 °C by using pulsed laser deposition (PLD) technique. The influence of Cu incorporation on structural, surface morphological, elemental composition and UV detection properties of ZnO film was investigated. X-ray diffraction studies of thin films show that they are polycrystalline and have a hexagonal wurtzite structure; however, Cu doping improves the preferential orientation along c-axis. The chemical state of constituent elements was analysed by X-ray photoelectron spectroscopy (XPS). It indicates the presence of Cu ions in the doped film that exist in a mixed univalent and bivalent state. FE-SEM observations support the crystallographic results. The effective incorporation of Cu ions into the lattice of the ZnO nanostructure without changing its wurtzite structure was confirmed by an energy dispersive X-ray spectroscopic analysis (EDX). The UV photodetection characteristics of both films were further studied in metal-semiconductor-metal (MSM) planar configurations at room temperature and are found to be greatly influenced by Cu doping. The incorporation of Cu into ZnO lattice increases the resistivity of thin film; which leads to lower dark current. As a result, the Cu-doped ZnO film based UV PD demonstrates improved UV sensitivity of about 66.92 upon 2 mW/cm2 UV illumination at 365 nm peak wavelengths and 5 V applied bias. The reproducible UV detection performance of MSM devices was also ensured by periodically switching UV light on and off at fixed time intervals. |
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| Keywords: | ZnO thin film Pulsed laser deposition XRD XPS FE-SEM UV photodetector |
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