Electrical and chemical stability engineering of solution-processed indium zinc oxide thin film transistors via a synergistic approach of annealing duration and self-combustion process |
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| Affiliation: | 1. Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, PR China;2. School of Physics, Sun Yat-Sen University, Guangzhou 510275, PR China;3. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;1. College of Physics, Qingdao University, Qingdao 266071, China;2. College of Electronic & Information Engineering, Qingdao University, Qingdao 266071, China;3. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;4. Electronic Ceramics Center, DongEui University, Busan 614-714, South Korea;1. Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China;2. Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China;3. Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, China;1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791, Republic of Korea;2. Department of Materials Science and Engineering, University of Wisconsin—Madison, Madison, WI 53706, USA |
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| Abstract: | The electrical and chemical stability of solution-processed indium zinc oxide (IZO) channel thin-film transistors (TFTs) were engineered via a synergistic approach of annealing duration and self-combustion process. In particular, the amorphous IZO TFTs that were thermally treated at 400 °C for 3 h using the specific precursor combination to generate internal self-combustion energy showed the best electrical performance [high saturation mobility (μSAT)=2.7 cm2/V s] and stability [low threshold voltage shift (ΔVTH) under positive bias stress of 10.5 V] owing to the formation of oxide films with excellent metal–oxide–metal (M–O–M) bonds, fewer impurities, and an amorphous phase compared to IZO TFTs using other precursor formulas and annealing times. Longer annealing times led to a saturated M–O bond ratio and crystallization via extreme thermal annealing, which induced electrical degradation (low μSAT and high ΔVTH) of IZO TFTs. In the wet chemical patterning of electrodes, conventional acidic and basic wet etchants cause severe damage to the surfaces of the IZO channels; thus, insufficiently annealed IZO TFTs exhibited considerable degradation in terms of their on-current level and mobility. Alternatively, the TFTs subjected to an excessively long-term thermal annealing showed only a moderate decrease in mobility with the formation of small nanocrystals. |
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| Keywords: | Electrical stability Chemical stability Sol-gel process Oxide semiconductor Thin film transistor Annealing time |
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