| 用PECVD制备掺氟氧化硅低介电常数薄膜 |
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| 引用本文： | 王鹏飞,丁士进,张卫,张剑云,王季陶. 用PECVD制备掺氟氧化硅低介电常数薄膜[J]. 微电子学, 2000, 30(5): 347-350 |
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| 作者姓名： | 王鹏飞 丁士进 张卫 张剑云 王季陶 |
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| 作者单位： | 复旦大学,电子工程系,上海,200433 |
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| 基金项目： | 国家自然科学基金资助!(项目编号 :6 9776 0 2 6 ) |
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| 摘 要： | 用ＰＥＣＶＤ淀积了低介电常数的掺氟氧化硅介质薄膜，ＳｉＦ４的流量达到６０ｓｃｃｍ时，薄膜的相对介电常数可以降低到３．２。对试样的ＦＴＩＲ分析表明，薄膜中大部分的氟以Ｓｉ－Ｆ键形式存在。Ｃ－Ｖ特性测试表明，薄膜介电常数随氟含量的增加而减小，但薄膜的吸水性随氟含量的增加而变大。并进一步讨论了介电常数和薄膜稳定性与薄膜中氟原子含量之间的内在联系。
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| 关 键 词： | 化学气相淀积 掺氟氧化硅 低介电常数薄膜 |
| 修稿时间： | 1999-12-08 |
Preparation of Fluorine Doped Silicon Oxide Films by Using Plasma Enhanced Chemical Vapor Deposition |
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| WANG Peng-fei,DING Shi-jin,ZHANG Wei,ZHANG Jian-yun,WANG Ji-tao. Preparation of Fluorine Doped Silicon Oxide Films by Using Plasma Enhanced Chemical Vapor Deposition[J]. Microelectronics, 2000, 30(5): 347-350 |
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| Authors: | WANG Peng-fei DING Shi-jin ZHANG Wei ZHANG Jian-yun WANG Ji-tao |
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| Abstract: | Fluorine doped s ilicon oxide films are prepared using plasma enhanced chemical vapor deposition (PECVD) F doped silicon dioxide film with relative dielectric constant of 3 2 is deposited at an SiF 4 flow rate of 60 sccm With the increase of F contents in the film, the dielectric constant decreases The decrease of die lectric constant is more obvious when the flow rate of SiF 4 is small The wa ter resistant ability deteriorates with the increase of F concentration in the f ilm The mechanism of the decrease of dielectric constant in these films is inve stigated The relation between F concentration and the water resistant abilit y of the film is also discussed |
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| Keywords: | Chemical vapor deposition F-doped SiO_2 Low dielectric constant film FTIR spectrum |
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