Crystal Orientation Dependence of Macropore Formation in n-Si With Backside-Illumination in HF-Electrolyte

The formation of macropores on anodically biased n-type silicon with backside-illumination was investigated as a function of crystal orientation and bias voltage. Specimens were cut from bulk crystals with various orientations from {100} to {111}, polished and subjected to anodic etching in HF. The resulting pores were investigated on cleaved samples by SEM. All pores were found to grow in either a 100 direction or a 113 direction, depending on the misorientation angle. This finding applies also to the branching of a single pore. The results can be understood if the valence for the dissolution reaction is approximately 2.6 in 100 and approximately 4 in the 113 direction, and if all other directions are not allowed for the growth of pores in Si.