| AlN光电导X-射线探测研究 |
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| 引用本文： | 王新建,宋航,李志明,蒋红,黎大兵,缪国庆,陈一仁,孙晓娟.AlN光电导X-射线探测研究[J].半导体学报,2012,33(10):103002-4. |
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| 作者姓名： | 王新建 宋航 李志明 蒋红 黎大兵 缪国庆 陈一仁 孙晓娟 |
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| 作者单位： | State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China;Graduate University of the Chinese Academy of Sciences, Beijing 100039, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China |
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| 基金项目： | 国家自然科学基金(51072196和51072195） |
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| 摘 要： | 使用AlN制备了光电导结构的X-射线探测器，研究了探测器对X-射线强度的响应。探测器具有很小的漏电流，在100V的偏压下小于0.1 nA。光电流测量表明：X-射线强度与探测器的光电流成平方关系，并且在强X-射线照射下，光电流与暗电流之比可达到10。利用ABC模型，对探测器的X-射线强度响应特性进行了分析，给出了很好的物理机制解释。
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| 关 键 词： | X射线检测 感光体 氮化铝 照射强度 ABC模型 光电流 射线照射 测定结果 |
| 收稿时间： | 3/4/2012 9:48:24 AM |
An aluminum nitride photoconductor for X-ray detection |
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| Wang Xinjian,Song Hang,Li Zhiming,Jiang Hong,Li Dabing,Miao Guoqing,Chen Yiren and Sun Xiaojuan.An aluminum nitride photoconductor for X-ray detection[J].Chinese Journal of Semiconductors,2012,33(10):103002-4. |
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| Authors: | Wang Xinjian Song Hang Li Zhiming Jiang Hong Li Dabing Miao Guoqing Chen Yiren and Sun Xiaojuan |
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| Affiliation: | State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics,Changchun 130033, China;Graduate University of the Chinese Academy of Sciences, Beijing 100039, China;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics,Changchun 130033, China |
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| Abstract: | An AlN photoconductor for X-ray detection has been fabricated, and its response to X-ray irradiation intensity is studied. The photoconductor has a very low leakage current, less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation. The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity, and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor. By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed, and a reasonable interpretation of the physical mechanism is obtained. |
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| Keywords: | AlN photoconductor X-ray detection recombination |
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