| 基于数值模拟的钨电极相变存储单元电极尺寸优化研究 |
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| 引用本文： | 魏益群,林信南,贾宇超,崔小乐,张兴,宋志棠. 基于数值模拟的钨电极相变存储单元电极尺寸优化研究[J]. 半导体学报, 2012, 33(10): 104006-5 |
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| 作者姓名： | 魏益群 林信南 贾宇超 崔小乐 张兴 宋志棠 |
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| 作者单位： | Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;TSRC, Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, School of Electronics and Computer Science, Peking University, Beijing 100871, China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| 摘 要： | 在相变存储器器件设计中，为预测不同器件结构的性能优化器件结构设计，建立相应的数值模型进行数值模拟是一项非常重要的工作。在我们的工作中，提出了一个包含泊松方程，电流连续性方程，热传导方程以及相变动力学模型的耦合系统，进行相变存储器数值模拟，与常用的相变存储器数值模拟相比，使用了泊松方程以及电学连续性方程代替拉普拉斯方程来对相变存储器的电学特性进行建模，由于组成相变存储器的相变材料，本质上是一种半导体，因此，利用上述基于半导体理论的数值模型，能更精确的反应相变存储器的电学特性。结果表明，该模拟方法能够进行相变存储器的模拟，并与测试数据吻合较好。最后，利用上述数值模拟，对不同电极尺寸的相变存储单元的性能进行预测，从而得到影响相变存储单元性能的关键设计参数以及相应的设计策略。
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| 关 键 词： | 相变存储器 数值模拟 存储单元 电流连续性方程 Laplace方程 缩放 模拟预测 泊松方程 |
| 收稿时间： | 2012-03-19 |
| 修稿时间： | 2012-05-11 |
Contact size scaling of a W-contact phase-change memory cell based on numerical simulation |
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| Wei Yiqun,Lin Xinnan,Jia Yuchao,Cui Xiaole,Zhang Xing and Song Zhitang. Contact size scaling of a W-contact phase-change memory cell based on numerical simulation[J]. Chinese Journal of Semiconductors, 2012, 33(10): 104006-5 |
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| Authors: | Wei Yiqun Lin Xinnan Jia Yuchao Cui Xiaole Zhang Xing Song Zhitang |
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| Affiliation: | Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;TSRC, Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, School of Electronics and Computer Science, Peking University, Beijing 100871, China;Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | In the design of phase-change memory (PCM), it is important to perform numerical simulations to predict the performances of different device structures. This work presents a numerical simulation using a coupled system including Poisson's equation, the current continuity equation, the thermal conductivity equation, and phase-change dynamics to simulate the thermal and electric characteristics of phase-change memory. This method discriminates the common numerical simulation of PCM cells, from which it applies Possion's equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells, which is more adoptable for the semiconductor characteristics of phase-change materials. The results show that the simulation agrees with the measurement, and the scalability of PCM is predicted. |
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| Keywords: | phase-change memory scaling numerical simulation |
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