| 纳米压印工艺中关键技术 |
| |
| 引用本文： | 王智浩,刘文,王磊,左强,赵彦立. 纳米压印工艺中关键技术[J]. 半导体学报, 2012, 33(10): 106002-4 |
| |
| 作者姓名： | 王智浩 刘文 王磊 左强 赵彦立 |
| |
| 作者单位： | Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China |
| |
| 基金项目： | 国家自然科学基金;国家高技术研究发展计划（863计划） |
| |
| 摘 要： | 纳米压印技术由于其分辨率高、工艺成本低以及适于大规模工业化生产的优点被广泛利用于纳米尺度的半导体器件的制作之中。然而，传统的硬模板压印技术存在着模板寿命短、大面积均匀性差以及易受颗粒影响的缺点。本文提出了一种高分子聚合物软模板（IPS）压印的方法来改进以上缺点，同时，本文提出在软模板制作和后续的紫外压印中采用变温变压阶梯升降压的方法来提高压印过程中胶的流动性，以提高压印图形的质量。最后，我们利用这种方法方法出了高质量的50纳米线宽的光栅图形。
|
| 关 键 词： | 纳米压印光刻 关键工艺 光刻技术 半导体器件 IPS 纳米级 分辨率 成本低 |
| 收稿时间： | 2012-03-31 |
| 修稿时间： | 2012-06-08 |
Key process study in nanoimprint lithography |
| |
| Wang Zhihao,Liu Wen,Wang Lei,Zuo Qiang and Zhao Yanli. Key process study in nanoimprint lithography[J]. Chinese Journal of Semiconductors, 2012, 33(10): 106002-4 |
| |
| Authors: | Wang Zhihao Liu Wen Wang Lei Zuo Qiang Zhao Yanli |
| |
| Affiliation: | Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China |
| |
| Abstract: | Nanoimprint lithography (NIL) is widely used in the fabrication of nano-scale semiconductor devices for its advantages of high resolution, low cost, and high throughput. However, traditional hard stamp imprinting has some drawbacks such as short stamp lifetime, bad uniformity in big areas, and large particle influence. In this paper, a flexible intermediate polymer stamp (IPS) is proposed to solve the drawbacks mentioned above. Meanwhile, we use a method of temperature-pressure variation imprinting to improve the resist liquidity in the process of imprinting, and eventually we achieve high quality patterns. This method combined with IPS has been used to fabricate a high quality grating whose half pitch is 50 nm. |
| |
| Keywords: | nanoimprint lithography soft mold temperature-pressure variation |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
