| 新型相变材料Al1.3Sb3Te使用CF4/Ar等离子体干法刻蚀 |
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| 引用本文： | 张徐,饶峰,刘波,彭程,周夕淋,姚栋宁,郭晓慧,宋三年,王良咏,成岩,吴良才,宋志棠,封松林.新型相变材料Al1.3Sb3Te使用CF4/Ar等离子体干法刻蚀[J].半导体学报,2012,33(10):102003-6. |
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| 作者姓名： | 张徐 饶峰 刘波 彭程 周夕淋 姚栋宁 郭晓慧 宋三年 王良咏 成岩 吴良才 宋志棠 封松林 |
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| 作者单位： | State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| 基金项目： | 国家重点基础研究规划项目;国家自然科学基金 |
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| 摘 要： | 对使用CF4/Ar 混合气体刻蚀Al1.3Sb3Te的特性进行了研究。实验控制的参数是：气体流入刻蚀腔的速率，CF4/Ar 比例，O2的加入量，腔内压强以及加在底电极上的入射射频功率。总的气体流量是50sccm ，研究刻蚀速率与CF4/Ar的比例，O2加入量，腔内压强和入射射频功率的关系。最后刻蚀参数被优化。 使用优化的刻蚀参数CF4的浓度4%，功率300W，压强800mTorr，刻蚀速率达到70.8nm/min，刻蚀表面平整
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| 关 键 词： | Ar等离子体 CF4 干法刻蚀 相变型 气体混合物 材料 RF功率 蚀刻速率 |
| 收稿时间： | 4/17/2012 2:17:24 PM |
| 修稿时间： | 4/17/2012 2:17:24 PM |
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma |
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| Zhang Xu,Rao Feng,Liu Bo,Peng Cheng,Zhou Xilin,Yao Dongning,Guo Xiaohui,Song Sanniang,Wang Liangyong,Cheng Yan,Wu Liangcai,Song Zhitang and Feng Songlin.Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J].Chinese Journal of Semiconductors,2012,33(10):102003-6. |
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| Authors: | Zhang Xu Rao Feng Liu Bo Peng Cheng Zhou Xilin Yao Dongning Guo Xiaohui Song Sanniang Wang Liangyong Cheng Yan Wu Liangcai Song Zhitang and Feng Songlin |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | The dry etching characteristic of Al1.3Sb3Te film was investigated by using a CF4/Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF4/Ar ratio, the O2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al1.3Sb3Te thin films was investigated as a function of the CF4/Ar ratio, the O2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF4 concentration of 4%, power of 300 W and pressure of 80 mTorr. |
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| Keywords: | Al1 3Sb3Te dry etching CF4/Ar gas mixture etch rate |
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