| 化学浴法生成金属/锗间含碳层对费米能级钉扎的释放 |
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| 引用本文： | 王巍,王敬,赵梅,梁仁荣,许军. 化学浴法生成金属/锗间含碳层对费米能级钉扎的释放[J]. 半导体学报, 2012, 33(10): 102004-5 |
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| 作者姓名： | 王巍 王敬 赵梅 梁仁荣 许军 |
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| 作者单位： | Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| 基金项目： | 国家高技术研究发展计划（863计划）;国家重点基础研究发展计划（973计划） |
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| 摘 要： | 使用化学浴的方法在金属/锗结构中插入一层含碳层,可以使得肖特基势垒高度得到调整。使用十二稀、十四稀、十六烯和十八烯在锗衬底上进行化学浴可以生成超薄含碳层,该含碳层可以阻挡金属中的自由电子波函数穿透至锗中。金属致带隙状态得到抑制,费米能级钉扎得以释放,所形成结构的肖特基势垒高度为0.17eV。这一新方法较传统方法极大低降低了工艺复杂度,并且得到了很好的结果。
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| 关 键 词： | 金属诱导 费米能级 化学 结构 锗 钉扎 自由电子 八碳烯 |
| 收稿时间： | 2012-03-31 |
| 修稿时间： | 2012-05-17 |
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath |
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| Wang Wei,Wang Jing,Zhao Mei,Liang Renrong and Xu Jun. Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath[J]. Chinese Journal of Semiconductors, 2012, 33(10): 102004-5 |
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| Authors: | Wang Wei Wang Jing Zhao Mei Liang Renrong Xu Jun |
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| Affiliation: | Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | Insertion of a C-containing layer in a metal/Ge structure, using a chemical bath, enabled the Schottky barrier height (SBH) to be modulated. Chemical baths with 1-octadecene, 1-hexadecene, 1-tetradecene, and 1-dodecene were used separately with Ge substrates. An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge. Metal-induced gap states are alleviated and the pinned Fermi level is released. The SBH is lowered to 0.17 eV. This new formation method is much less complex than traditional ones, and the result is very good. |
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| Keywords: | Schottky barrier Fermi level pinning chemical bath blocking layer |
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