Improved strained HEMT characteristics using double-heterojunctionIn0.65Ga0.35As/In0.52Al0.48As design |
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| Authors: | Ng GI Pavlidis D Tutt M Oh J-E Bhattacharya PK |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI; |
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| Abstract: | The DC and microwave properties of strained In0.65Ga 0.35As/In052Al0.48As HEMTs (high electron-mobility transistors) with double-heterojunction design are presented. The high sheet carrier density and good carrier confinement give rise to excellent device performance with very low output conductance. For 1×150-μm2 long-gate HEMTs, the measured cutoff frequency fT and maximum frequency of oscillation fmax are as high as 37 and 66 GHz, respectively |
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