| C波段低噪声放大器的仿真设计 |
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| 引用本文： | 高向可. C波段低噪声放大器的仿真设计[J]. 电子设计工程, 2011, 19(22): 94-97 |
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| 作者姓名： | 高向可 |
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| 作者单位： | 电子科技大学物理电子学院,四川成都,610054 |
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| 摘 要： | 基于使LNA在5.5G~6.5G Hz频段内具有优良性能的目的,本设计中采用了具有低噪声、较高关联增益、PHEMT技术设计的ATF-35176晶体管,电路采用二级级联放大的结构形式,利用微带电路实现输入输出和级间匹配,通过ADS软件提供的功能模块和优化环境对电路增益、噪声系数、驻波比、稳定系数等特性进行了研究设计,最终...
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| 关 键 词： | 低噪声放大器 负反馈网络 HEMT C波段 ADS仿真及优化 |
Simulation and design of C-band low-noise amplifier |
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| GAO Xiang-ke. Simulation and design of C-band low-noise amplifier[J]. Electronic Design Engineering, 2011, 19(22): 94-97 |
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| Authors: | GAO Xiang-ke |
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| Affiliation: | GAO Xiang-ke(Institute of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | Based on the LNA with excellent performance from 5.5GHz to 6.5GHz band purpose,this design uses a low-noise,high associated gain,PHEMT technology designed ATF-35176 transistor,the circuit is presented with two cascade structure form,microstrip circuit is used to complete the input,output and interstage matching,through the functionality modules and optimizing environment provided by ADS software,the circuit gain,noise figure,VSWR,stability factor and other characteristics are studied,ultimately from 5.5GHz to 6.5GHz band the LNA gain is greater than 20dB,the noise is less than 1.55dB,input and output VSWR is less than 2,and all factors meet the design requirements. |
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| Keywords: | low-noise amplifier negative feedback network HEMT C-band ADS simulation and optimization |
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