| MOSFET的损耗分析与工程近似计算 |
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| 引用本文： | 罗四海,娄本超,唐君,李彦.MOSFET的损耗分析与工程近似计算[J].电子设计工程,2011,19(21):136-138,145. |
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| 作者姓名： | 罗四海 娄本超 唐君 李彦 |
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| 作者单位： | 中国工程物理研究院,四川绵阳,621900 |
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| 摘 要： | 根据MOSFET的简化模型,分析了导通损耗和开关损耗,通过典型的修正系数,修正了简化模型的极间电容。通过开关磁铁电源的实例计算了工况下MOSFET的功率损耗,计算结果表明该电源中工况下的MOSFET功率损耗比较小,可以长时间可靠稳定的工作。
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| 关 键 词： | MOSFET 开通损耗 开关损耗 修正系数 |
The power losses of MOSFET and approximate calculation |
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| LUO Si-hai,LOU Ben-chao,TANG Jun,LI Yan.The power losses of MOSFET and approximate calculation[J].Electronic Design Engineering,2011,19(21):136-138,145. |
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| Authors: | LUO Si-hai LOU Ben-chao TANG Jun LI Yan |
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| Affiliation: | (China Academy of Engineering Physics,Mianyang 621900,China) |
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| Abstract: | The power losses of the conduction and conversion process of the power MOSFET were analyzed in detail based on the simplified model.Modification of the capacitance of the simplified model was accomplished by typical coefficient. These power losses were calculated by sample analysis of switching power supply, the results indicated that the operating-conditioned power supply could be operated stably for a long time was attributable to the low power losses. |
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| Keywords: | MOSFET conduction loss switching loss coefficient |
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