Temperature dependence of the Raman spectra of graphene and graphene multilayers |
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Authors: | Calizo I Balandin A A Bao W Miao F Lau C N |
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Affiliation: | Nano-Device Laboratory, Department of Electrical Engineering, University of California-Riverside, Riverside, California 92521, USA. |
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Abstract: | We investigated the temperature dependence of the frequency of G peak in the Raman spectra of graphene on Si/SiO2 substrates. The micro-Raman spectroscopy was carried out under the 488 nm laser excitation over the temperature range from -190 to +100 degrees C. The extracted value of the temperature coefficient of G mode of graphene is chi = -0.016 cm-1/ degrees C for the single layer and chi = -0.015 cm-1/ degrees C for the bilayer. The obtained results shed light on the anharmonic properties of graphene. |
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