TSV转接板硅通孔的热应力分析

硅通孔(TSV)技术作为实现三维(3D)封装的关键而被广泛关注。该文研究了在温度载荷作用下TSV转接板上铜和硅的应力状态，给出了通孔为完全填充铜和部分填充铜两种情况下的应力解析解，并讨论了孔距对转接板应力的影响。建立了TSV转接板的二维有限元模型，并用于验证解析解的适用性。结果表明:当TSV孔距达到孔直径的3倍以上时，解析解可以给出准确的转接板上铜和硅的应力结果；通过减薄镀铜层可以减小硅上的应力；转接板上应力与加载的温度变化成线性关系。

ANALYSIS OF THERMAL STRESS IN THROUGH SILICON VIA OF INTERPOSER

Through silicon vias (TSV) has been given an extensive attention because it is a key enabling technology for three dimensional (3D) IC. In this paper, the thermal stresses of the fully copper-filled and partially copper-filled vias subjected to temperature excursion were investigated, and the analytical solutions of stresses in the copper and the silicon were proposed. The solutions have been used to investigate the effect of the ratio of via pitch to via diameter and the radial thickness of copper. A two dimension finite element model was established and used to validate the analytical solution. The results suggest that the analytical solution can give a good estimation of thermal stress in the copper and silicon; the stress in the silicon can be reduced by decreasing the radial thickness of the electroplated copper; the stresses change linearly with the temperature excursion.