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Laser structuring for back junction silicon solar cells
Authors:Peter Engelhart  Nils‐Peter Harder  Rainer Grischke  Agnes Merkle  Rüdiger Meyer  Rolf Brendel
Abstract:We demonstrate mask‐free fabrication of a 22·0%‐efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p ‐type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory‐type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12·5 × 12·5 cm2‐sized solar cells in just a few seconds is feasible with commercially available equipment. Copyright © 2006 John Wiley & Sons, Ltd.
Keywords:RISE  back contact  laser technology  high efficiency  silicon solar cells  back junction  rear interdigitated
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