Negative bias temperature instability in strain-engineered p-MOSFETs: a simulation study |
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Authors: | Tapas Kumar Maiti Satya Sopan Mahato Pinaki Chakraborty Chinmay Kumar Maiti Subir Kumar Sarkar |
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Affiliation: | 1.Electronics and ECE Department,IIT Kharagpur,Kharagpur,India;2.ETCE Department,Jadavpur University,Kolkata,India |
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Abstract: | Negative Bias Temperature Instability (NBTI) in p-MOSFETs is a serious reliability concern for digital and analog CMOS circuit
applications. Strain in the channel region affects negative bias temperature instabilities, low frequency noise, radiation
hardness, gate oxide quality and hot carrier performance. The understanding of these phenomena in strain-engineered p-MOSFETs
from fundamental physics is essential. In this paper, technology CAD (TCAD) has been used to study the effects of strain on
the negative bias temperature instabilities in p-MOSFETs. A quasi two dimensional (quasi-2D) physics-based Coulomb scattering
mobility model for strained-Si has been developed and implemented in Synopsys Sentaurus Device tool for device simulation
to understand NBTI in strain-engineered p-MOSFETs. |
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