The adhesion of copper films deposited onto aluminum nitride |
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Authors: | J-W Park A J Pedraza D H Lowndes |
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Affiliation: | (1) Department of Materials Science and Engineering,, The University of Tennessee,, Knoxville,, TN 37996-2200,, USA;(2) Solid State Division, Oak Ridge National Laboratory,, P.O. Box 2008,, TN 37831-6056,, USA |
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Abstract: | Good adhesion between copper film and AlN substrate is obtained when the surface of AlN is laser-irradiated prior to copper
film deposition and post deposition annealing is conducted. Surface chemistry of AlN substrates before and after laser irradiation
and the interfacial reactions of copper film/AlN couples were studied with Auger Electron Spectroscopy (AES) to understand
the adhesion mechanisms. The surface of as-received AlN substrates was covered with a thin sheath of Al2O3. Laser irradiation removed the surface Al2O3 layers, smoothened the surface, and decomposed AlN leaving metallic aluminum on the surface. The interfacial reactions in
the copper film/AlN couple are affected by the amounts of oxygen and metallic aluminum available at the interface. The adhesion
mechanism is the formation of a Cu-O-Al compound at the interface of copper film/AlN couple. Since copper does not react with
AlN, laser induced decomposition of AlN seems to be the driving force for the formation of the compound.
This revised version was published online in September 2006 with corrections to the Cover Date. |
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